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SSG4530C Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSG4530C Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 6 page  SSG4530C N-Ch: 5.3A, 30V, RDS(ON) 82 mΩ Ω Ω Ω P-Ch: -5.2A, -30V, RDS(ON) 80 mΩ Ω Ω Ω N & P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente 30-Jul-2012 Rev. A Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Ch Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) N 1.2 1.7 2.5 V VDS=VGS, ID=250µA P -1.2 -1.8 -2.5 VDS=VGS, ID= -250µA Gate-Body Leakage IGSS N - ±80 ±100 nA VDS=0, VGS=20V P - ±80 ±100 VDS=0, VGS= -20V Zero Gate Voltage Drain Current IDSS N - 0.8 1 µA VDS=24V, VGS=0 P - -0.8 -1 VDS= -24V, VGS=0 On-State Drain Current 1 ID(on) N 20 24 - A VDS=5V, VGS=10V P -20 -24 - VDS= -5V, VGS= -10V Drain-Source On-Resistance 1 RDS(ON) N - 43 50 m VGS=10V, ID=5.3A - 70 82 VGS=4.5V, ID=4.2A P - 45 52 VGS= -10V, ID= -5.2A - 72 80 VGS= -4.5V, ID= -4.2A Diode Forward Voltage VSD N - 0.75 - V VGS=0, IS=1.3A P - -0.88 - VGS=0, IS= -1.3A Dynamic 2 Total Gate Charge Qg N - 2.2 - nC N-Channel ID=5.3A, VDS=15V, VGS=10V P-Channel ID= -5.2A, VDS= -10V, VGS= -15V P - 10 - Gate-Source Charge Qgs N - 0.5 - P - 2.2 - Gate-Drain Charge Qgd N - 0.8 - P - 1.7 - Turn-On Delay Time Td(on) N - 8 - nS N-Channel VDD=15V, VGEN=10V ID=1A, RGEN=6 P-Channel VDD= -15V, VGEN= -10V ID= -1A, RGEN=6 P - 10 - Rise Time Tr N - 5 - P - 2.8 - Turn-Off Delay Time Td(off) N - 23 - P - 53.6 - Fall Time Tf N - 3 - P - 46 - Notes: 1. Pulse test：PW 300µs duty cycle ≦ ≦2%. 2. Guaranteed by design, not subject to production testing. |
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