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NTD5807N Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTD5807N
Description  Power MOSFET 40 V, 23 A, Single N?묬hannel, DPAK/IPAK
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTD5807N Datasheet(HTML) 2 Page - ON Semiconductor

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NTD5807N, NVD5807N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
38
mV/
°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 40 V
TJ = 25°C
1.0
mA
TJ = 150°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.4
2.5
V
Negative Threshold Temperature Co-
efficient
VGS(TH)/TJ
−5.8
mV/
°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 5.0 A
20
31
m
W
VGS = 4.5 V, ID = 4.0 A
29
37
Forward Transconductance
gFS
VDS = 10 V, ID = 15 A
8.1
S
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
603
pF
Output Capacitance
Coss
96
Reverse Transfer Capacitance
Crss
73
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V,
ID = 5.0 A
12.6
20
nC
Threshold Gate Charge
QG(TH)
0.76
Gate−to−Source Charge
QGS
2.2
Gate−to−Drain Charge
QGD
3.1
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
td(on)
VGS = 4.5 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
11.2
ns
Rise Time
tr
111
Turn−Off Delay Time
td(off)
11.2
Fall Time
tf
3.2
Turn−On Delay Time
td(on)
VGS = 10 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
6.7
ns
Rise Time
tr
20.4
Turn−Off Delay Time
td(off)
15.6
Fall Time
tf
2.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.91
1.2
V
TJ = 150°C
0.76
Reverse Recovery Time
tRR
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
15.7
ns
Charge Time
ta
10.75
Discharge Time
tb
5.0
Reverse Recovery Charge
QRR
6.1
nC
2. Pulse Test: Pulse Width
≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.


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