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NTD5807N Datasheet(PDF) 2 Page - ON Semiconductor |
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NTD5807N Datasheet(HTML) 2 Page - ON Semiconductor |
2 / 7 page NTD5807N, NVD5807N http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 38 mV/ °C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 mA TJ = 150°C 100 Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.4 2.5 V Negative Threshold Temperature Co- efficient VGS(TH)/TJ −5.8 mV/ °C Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 5.0 A 20 31 m W VGS = 4.5 V, ID = 4.0 A 29 37 Forward Transconductance gFS VDS = 10 V, ID = 15 A 8.1 S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 603 pF Output Capacitance Coss 96 Reverse Transfer Capacitance Crss 73 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 20 V, ID = 5.0 A 12.6 20 nC Threshold Gate Charge QG(TH) 0.76 Gate−to−Source Charge QGS 2.2 Gate−to−Drain Charge QGD 3.1 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time td(on) VGS = 4.5 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 11.2 ns Rise Time tr 111 Turn−Off Delay Time td(off) 11.2 Fall Time tf 3.2 Turn−On Delay Time td(on) VGS = 10 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 6.7 ns Rise Time tr 20.4 Turn−Off Delay Time td(off) 15.6 Fall Time tf 2.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.91 1.2 V TJ = 150°C 0.76 Reverse Recovery Time tRR VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A 15.7 ns Charge Time ta 10.75 Discharge Time tb 5.0 Reverse Recovery Charge QRR 6.1 nC 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. |
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