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SFT5 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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SFT5 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page SFT1 - SFT9 SUPER FAST RECTIFIER DIODES PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Super fast recovery time MECHANICAL DATA : * Case : D2A Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.645 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherw ise specified. Single phase, half w ave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL SFT1 SFT2 SFT3 SFT4 SFT5 SFT6 SFT7 SFT8 SFT9 UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 150 200 300 400 600 800 1000 Volts Maximum RMS Voltage VRMS 35 70 105 140 210 280 420 560 700 Volts Maximum DC Blocking Voltage VDC 50 100 150 200 300 400 600 800 1000 Volts Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 55 °C IF(AV) 2.5 Amps. Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 100 Amps. Maximum Peak Forward Voltage at IF = 2.5 A. VF 0.95 1.4 1.7 Volts Maximum DC Reverse Current Ta = 25 °C IR 5 µA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 50 µA Maximum Reverse Recovery Time ( Note 1 ) Trr 35 ns Typical Junction Capacitance ( Note 2 ) CJ 50 pf Junction Temperature Range TJ - 65 to + 150 °C Storage Temperature Range TSTG - 65 to + 150 °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC UPDATE : APRIL 23, 1998 RATING D2A 0.040 (1.02) 0.0385 (0.98) 1.00 (25.4) MIN. 0.161 (4.1) 0.154 (3.9) 0.284 (7.2) 0.268 (6.8) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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