NE33200 (CHIP)

Chip Thickness: 140

µm typical

Note: All dimensions are typical unless otherwise specified

Notes:

1.S-Parameters include Bond Wires:

Gate:

Total 2 wires, 1 per bond pad 0.0129" (327

µm) long, each wire.

Drain:

Total 2 wires, 1 per bond pad 0.0118" (300

µm) long, each wire.

Source: Total 4 wires, 2 per side, 0.0071" (180

µm) each wire.

Wire:

0.0007" (17.8

µm) dia. gold.

2.Gain Calculations:

MAG = Maximum Available gain

MSG = Maximum Stable Gain

PART NUMBER

IDSS RANGE (mA)

NE33200

Standard (15 - 80)

NE33200N

15 - 50

NE33200M

50 - 80

ORDERING INFORMATION

NE33200

DD

G

G

S

S

45

31

47

25

13

400

±40 mm

120

56

66

56

88

61

350

±35

MAG =

K - 1

).

2

When K

≤ 1, MAG is undefined and MSG values are used. MSG =

, K = 1 + | ∆ | - |S

11

2

2

2

,

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES

• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only)

• Internet: http://WWW.CEL.COM

04/12/2001

DATA SUBJECT TO CHANGE WITHOUT NOTICE