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STT3808NE Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # STT3808NE
Description  N-Channel Enhancement Mode Mos.FET
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

STT3808NE Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
STT3808NE
6A , 20V , RDS(ON) 20 mΩ
N-Channel Enhancement Mode Mos.FET
18-Oct-2013 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
Key Features:
Low rDS(on) trench technology
Low thermal impedance
Fast switching speed
Typical Applications:
Battery Powered Instruments
Portable Computing
Mobile Phones
Fast switch
GPS Units and Media Players
PACKAGE INFORMATION
Package
MPQ
Leader Size
TSOP-6
3K
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±8
V
TA= 25°C
6
Continuous Drain Current
1
TA= 100°C
ID
3.6
A
Pulsed Drain Current
2
IDM
22
A
Continuous Source Current (Diode Conduction)
1
IS
1
A
TA= 25°C
0.83
Power Dissipation
1
TA= 100°C
PD
0.3
W
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 ~ 150
°C
Thermal Resistance Ratings
t≦10 sec
110
Maximum Junction to Ambient
1
Steady State
RθJA
150
°C / W
Notes
1. Surface Mounted on 1” x 1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
2.70
3.10
G
0
0.10
B
2.60
3.00
H
0.60 REF.
C
1.40
1.80
J
0.12 REF.
D
1.10 MAX.
K
10°
E
1.90 REF.
L
0.95 REF.
F
0.30
0.50
TSOP-6
B
L
F
H
C
J
D G
K
A
E
1
2
3
4
5
6
ESD
Protection Diode
2KV
G1
S2
G2
D1
S2
D2


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