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SSRF08N70SL Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSRF08N70SL Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 5 page Elektronische Bauelemente SSRF08N70SL 8A , 700V , RDS(ON) 1.2 N-Ch Enhancement Mode Power MOSFET 15-Oct-2013 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 700 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 2 - 4 V VDS=VGS, ID=250µA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±30V Drain-Source Leakage Current IDSS - - 1 µA VDS=700V, VGS=0 Static Drain-Source On-Resistance RDS(ON) - 0.95 1.2 VGS=10V, ID=4A Total Gate Charge 1.2 Qg - 26.11 - Gate-Source Charge 1.2 Qgs - 7.47 - Gate-Drain Change 1.2 Qgd - 8.51 - nC ID=8A VDS=560V VGS=10V Turn-on Delay Time 1.2 Td(on) - 26.48 - Rise Time 1.2 Tr - 39.96 - Turn-off Delay Time 1.2 Td(off) - 86.8 - Fall Time 1.2 Tf - 43.36 - nS VDD=350V ID=8A RG=25 Input Capacitance Ciss - 1357 - Output Capacitance Coss - 124.2 - Reverse Transfer Capacitance Crss - 4.4 - pF VGS =0 VDS=25V f =1.0MHz Source-Drain Diode Diode Forward Voltage VSD - - 1.4 V IS=8A, VGS=0 Continuous Source Current IS - - 8 A Pulsed Source Current ISM - - 32 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time 1. Trr - 515 - ns Reverse Recovery Charge 1. Qrr - 4.22 - µC IS=8A,VGS=0, dlF/dt=100A/µS Notes: 1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2% 2. Essentially independent of operating temperature. |
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