SSE04N65SL datasheet(1/5 Pages) SECOS

Part #	SSE04N65SL

Description	N-Ch Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SSE04N65SL

4A , 650V , RDS(ON) 2.7

N-Ch Enhancement Mode Power MOSFET

08-Oct-2013 Rev. A

Page 1 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

TO-220P

RoHS Compliant Product

A suffix of “-C” specifies halogen free

DESCRIPTION

The SSE04N65SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent RDS(on) and gate charge for most of the synchronous

buck converter applications .

FEATURES

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

650

V

Gate-Source Voltage

VGS

±30

V

TC=25°C

4

A

Continuous Drain Current

TC=100°C

ID

2.8

A

Pulsed Drain Current

IDM

16

A

TC=25°C

100

Total Power Dissipation

Derate above 25°C

PD

0.8

W

Single Pulse Avalanche Energy

1

EAS

202

mJ

Operating Junction and Storage Temperature Range

TJ, TSTG

-55~150

°C

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

RθJA

62.5

°C / W

Maximum Thermal Resistance Junction-Case

RθJC

1.25

°C / W

Notes:

1. L=30mH,IAS=3.36A, VDD=150V, RG=25 , Starting TJ =25°C

1

Gate

3

Source

2

Drain

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

9.3

10.6

H

2.54 BCS.

B

14.2

16.5

I

1.8

2.9

C

2.7 BSC.

J

2.6

3.95

D

12.6

14.7

K

0.3

0.6

E

1.0

1.8

L

5.8

7.0

F

0.4

1.0

M

1.2

1.45

G

3.6

4.8

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