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SMS3415 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SMS3415 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 3 page  Elektronische Bauelemente SMS3415 -4A , -20V , RDS(ON) 50 mΩ Ω Ω Ω P-Channel Enhancement Mode Power MOSFET 31-Oct-2013 Rev.A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS -20 - - V VGS=0, ID= -250µA Gate-Threshold Voltage VGS(th) -0.3 - -1 V VDS=VGS, ID= -250µA - - ±10 VGS= ±8V, VDS=0 Gate-Source Leakage Current IGSS - - ±1 µA VGS= ±4.5V, VDS=0 Drain-Source Leakage Current IDSS - - -1 µA VDS= -16V, VGS=0 Forward Transconductance 2 gfs 8 - - S VDS= -5V, ID= -4A Diode Forward Voltage 2 VSD - - -1 V IS= -1A, VGS=0 - - 50 VDS= -4.5V, ID=-4A - - 60 VGS= -2.5V, ID= -4A Static Drain-Source On-Resistance 1 RDS(ON) - - 73 m VGS= -1.8V, ID= -2A Switching Parameters Total Gate Charge Qg - 17.2 - Gate-Source Charge Qgs - 1.3 - Gate-Drain Change Qgd - 4.5 - nC ID= -4A VDS= -10V VGS= -4.5V Turn-on Delay Time Td(on) - 9.5 - Rise Time Tr - 17 - Turn-off Delay Time Td(off) - 94 - Fall Time Tf - 35 - nS VDS= -10V VGS= -4.5V RGEN=3 RL=2.5 Dynamic Parameters 3 Input Capacitance Ciss - 1450 - Output Capacitance Coss - 205 - Reverse Transfer Capacitance Crss - 160 - pF VGS =0 VDS= -10V f =1.0MHz Gate Resistance Rg - 6.5 - VGS= VDS=0, f =1.0MHz Note: 1. Repetitive rating, pulse width limited by junction temperature. 2. Pulse Test : Pulse width≦300µs, duty cycle≦2%. 3. These parameters have no way to verify. |
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