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HVR312 Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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HVR312 Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
1 / 2 page HVR312 - HVR320 HIGH VOLTAGE RECTIFIER DIODES PRV : 1200 - 2000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 1.21 grams MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL HVR312 HVR314 HVR316 HVR318 HVR320 UNIT Maximum Repetitive Peak Reverse Voltage VRRM 1200 1400 1600 1800 2000 Volts Maximum RMS Voltage VRMS 840 980 1120 1260 1400 Volts Maximum DC Blocking Voltage VDC 1200 1400 1600 1800 2000 Volts Maximum Average Forward Current Ta = 50°C IF(AV) 3.0 Amps. Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) IFSM 100 Amps. Maximum Peak Forward Voltage at IF = 3.0 Amps. VF 2.2 Volts Maximum DC Reverse Current IR 10 µA Typical Junction Capacitance (Note 1) Cj 36 pF Typical Thermal Resistance (Note 2) RθJA 26 °C/W Junction Temperature Range TJ - 40 to + 150 °C Storage Temperature Range TSTG - 40 to + 150 °C Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0V DC (2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted. UPDATE : AUGUST 1, 1998 RATING DO-201AD 0.21 (5.33) 0.19 (4.82) 0.375 (9.52) 0.285 (7.24) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) |
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