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2SC5508 Datasheet(PDF) 2 Page - NEC

Part No. 2SC5508
Description  NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC5508 Datasheet(HTML) 2 Page - NEC

 
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Preliminary Data Sheet P13865EJ1V0DS00
2
2SC5508
ELECTRICAL CHARACTERISTICS (TA = +25 °C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
200
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
200
nA
DC Current Gain
hFE
Note 1
VCE = 2 V, IC = 5 mA
50
70
100
RF Characteristics
Reverse Transfer Capacitance
Cre
Note 2
VCB = 2 V, IE = 0, f = 1 MHz
0.18
0.24
pF
Gain Bandwidth Product
fT
VCE = 3 V, IC = 30 mA, f = 2 GHz
20
25
GHz
Noise Figure
NF
VCE = 2 V, IC = 5 mA, f = 2 GHz, ZS = Zopt
–1.1
1.5
dB
Insertion Power Gain
|S21e|2
VCE = 2 V, IC = 20 mA, f = 2 GHz
14
17
dB
Maximum Available Power Gain
MAG
Note 3
VCE = 2 V, IC = 20 mA, f = 2 GHz
19
Maximum Stable Power Gain
MSG
Note 4
VCE = 2 V, IC = 20 mA, f = 2 GHz
20
dB
Output Power at 1 dB
Compression Point
P-1
VCE = 2 V, IC = 20 mA
Note 5, f = 2 GHz
–11
dBm
Output Power at Third Order
Intercept Point
OIP3
VCE = 2 V, IC = 20 mA
Note 5, f = 2 GHz
–22
Notes 1. Pulse measurement PW
≤ 350
µs, Duty cycle ≤ 2 %
2. Emitter to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
S21
MAG =
S12
k –
k2 – 1
4.
S21
MSG =
S12
5. Collector current when P-1 is output
hFE CLASSIFICATION
Rank
FB
Marking
T79
hFE
50 to 100


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