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2SC5508 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5508
Description  NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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2SC5508 Datasheet(HTML) 1 Page - NEC

 
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NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR
FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD
Document No. P13865EJ1V0DS00 (1st edition)
Date Published March 1999 N CP(K)
Printed in Japan
PRELIMINARY DATA SHEET
1999
©
FEATURES
Ideal for low-noise, high-gain amplification applications
NF = 1.1 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 5 mA
Maximum available power gain: MAG = 19 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 20 mA
•fT = 25 GHz technology
Flat-lead 4-pin thin super mini-mold (t = 0.59 mm)
ORDERING INFORMATION
Part Number
Quantity
Packaging Style
2SC5508
Loose product (50 pcs)
2SC5508-T2
Taping product (3 kpcs/reel)
• 8 mm wide emboss taping
• 1 pin (emitter), 2 pin (collector) feed hole direction
Remark To order evaluation samples, consult your NEC sales representative (available in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
15
V
Collector to Emitter Voltage
VCEO
3.3
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
Ptot
Note
115
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Note TA = +25 °C (free air)
THERMAL RESISTANCE
Item
Symbol
Value
Unit
Junction to Case Resistance
Rth j-c
150
°C/W
Junction to Ambient Resistance
Rth j-a
650
°C/W
Because this product uses high-frequency technology, avoid excessive static electricity, etc.


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