SST6601 datasheet(2/7 Pages) SECOS

Part #	SST6601

Description	N And P-Channel Enhancement Mode Power MOSFET

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Manufacturer	SECOS [SeCoS Halbleitertechnologie GmbH]

Direct Link	http://www.secosgmbh.com

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Elektronische Bauelemente

SST6601

3.4A, 30V, RDS(ON) 55mΩ

Ω

-2.3A, -30V, RDS(ON) 115mΩ

Ω

N And P-Channel Enhancement Mode Power MOSFET

25-Mar-2014 Rev. A

Page 2 of 7

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

N-Ch

30

-

VGS=0, ID=250µA

Drain-Source Breakdown

Voltage

P-Ch

BVDSS

-30

-

V

VGS=0, ID= -250µA

N-Ch

0.5

-

1.5

VDS=VGS, ID=250µA

Gate-Threshold Voltage

P-Ch

VGS(th)

-0.6

-

-1.4

V

VDS=VGS, ID= -250µA

N-Ch

-

5

-

VDS=5V, ID=3.4A

Forward Transconductance

P-Ch

gfs

-

5

-

S

VDS= -5V, ID= -2.3A

N-Ch

-

±100

VGS= ±12V

Gate-Source Leakage Current

P-Ch

IGSS

-

±100

nA

VGS= ±12V

N-Ch

-

1

VDS=30V, VGS=0

P-Ch

-

-1

VDS= -30 V, VGS=0

N-Ch

-

5

VDS=24V, VGS=0

Drain-Source Leakage Current

P-Ch

IDSS

-

-5

µA

VDS= -24V, VGS=0

N-Ch

-

55

VGS=10V, ID=3.4A

P-Ch

-

115

VGS= -10V, ID= -2.3A

N-Ch

-

70

VGS=4.5V, ID=2.8A

P-Ch

-

150

VGS= -4.5V, ID= -2A

N-Ch

-

110

VGS=2.5V, ID=1A

Drain-Source On-Resistance

2

P-Ch

RDS(ON)

-

200

m

VGS= -2.5V, ID= -1A

N-Ch

-

4.7

-

Total Gate Charge

2

P-Ch

Qg

-

3.1

-

N-Ch

-

1.58

-

Gate-Source Charge

P-Ch

Qgs

-

1.34

-

N-Ch

-

0.92

-

Gate-Drain (“Miller”) Charge

P-Ch

Qgd

-

0.72

-

nC

N-Channel

VDS=15V, VGS=4.5V, ID=3.4A

P-Channel

VDS= -15V, VGS= -4.5V, ID= -2.3A

N-Ch

-

4

-

Turn-on Delay Time

2

P-Ch

Td(on)

-

13

-

N-Ch

-

2

-

Rise Time

P-Ch

Tr

-

10

-

N-Ch

-

22

-

Turn-off Delay Time

P-Ch

Td(off)

-

28

-

N-Ch

-

3

-

Fall Time

P-Ch

Tf

-

13

-

nS

N-Channel

VDS=15V, RG=6 ,RL=5

VGS=10V

P-Channel

VDS= -15V, RG=6 ,RD=6

VGS= -10V

N-Ch

-

451

-

Input Capacitance

P-Ch

Ciss

-

456

-

N-Ch

-

32

-

Output Capacitance

P-Ch

Coss

-

44

-

N-Ch

-

26

-

Reverse Transfer Capacitance

P-Ch

Crss

-

37

-

pF

N-Channel

VGS=0, VDS=15V, f=1.0MHz

P-Channel

VGS=0, VDS= -15V, f=1.0MHz

N-Ch

-

2

3.5

Gate Resistance

P-Ch

Rg

-

6.2

7.5

f=1.0MHz

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