Elektronische Bauelemente

SSPR46N03

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

18-Apr-2014 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

Gate-Source Leakage Current

-

-

±100

nA

-

-

1

Drain-Source Leakage Current

-

-

5

µA

-

-

9

Static Drain-Source On-Resistance

2

-

-

13.5

m

Gate Resistance

-

2.1

3.5

f =1.0MHz

Total Gate Charge(10V)

-

10.6

-

Gate-Source Charge

-

4.2

-

Gate-Drain Change

-

4

-

nC

Turn-on Delay Time

2

-

6.4

-

Rise Time

-

70.6

-

Turn-off Delay Time

-

22.4

-

Fall Time

-

8

-

nS

Input Capacitance

-

1127

-

Output Capacitance

-

194

-

Reverse Transfer Capacitance

-

77

-

pF

f =1.0MHz

Guaranteed Avalanche Characteristics

Single Pulse Avalanche Energy

3

EAS

45

-

-

mJ

Source-Drain Diode

Diode Forward Voltage

2

-

-

1

V

Continuous Source Current

1,4

-

-

46

A

Pulsed Source Current

2,4

-

-

92

A

Reverse Recovery Time

-

12

-

nS

Reverse Recovery Charge

-

3.7

-

nC

Note:

1.

The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state

2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

4. The power dissipation is limited by 150°C juncti on temperature

5. The Min. value is 100% EAS tested guarantee.

6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.