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SPR45N10 Datasheet(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SPR45N10 Datasheet(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SPR45N10 45A , 100V , RDS(ON) 22 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 100 - - V VGS=0, ID= 250µA Gate-Threshold Voltage VGS(th) 2.5 - 4.5 V VDS=VGS, ID=250µA Forward Tranconductance gfs - 27 - S VDS=5V, ID=30A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V - - 1 VDS=80V, VGS=0, TJ=25°C Drain-Source Leakage Current IDSS - - 5 µA VDS=80V, VGS=0, TJ=55°C - 19 22 VGS=10V, ID=30A Static Drain-Source On-Resistance 2 RDS(ON) - 25 30 m VGS=7V, ID=15A Gate Resistance Rg - 1.9 3.8 f =1.0MHz Total Gate Charge Qg - 27.6 - Gate-Source Charge Qgs - 11.4 - Gate-Drain (“Miller”) Change Qgd - 7.9 - nC ID=30A VDS=80V VGS=10V Turn-on Delay Time 2 Td(on) - 15.6 - Rise Time Tr - 17.2 - Turn-off Delay Time Td(off) - 16.8 - Fall Time Tf - 9.2 - nS VDD=50V ID=30A VGS=10V RG=3.3 Input Capacitance Ciss - 1890 - Output Capacitance Coss - 268 - Reverse Transfer Capacitance Crss - 67 - pF VGS =0 VDS=15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 5 EAS 53 - - mJ VDD=25V, L=0.1mH, IAS=30A Source-Drain Diode Diode Forward Voltage 2 VSD - - 1 V IS=1A, VGS=0V Continuous Source Current 1,6 IS - - 45 A Pulsed Source Current 2,6 ISM - - 100 A VG=VD=0, Force Current Reverse Recovery Time trr - 34 - nS Reverse Recovery Charge Qrr - 47 - nC IF=30A, dl/dt=100A/µs, TJ=25°C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=41A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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