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2SC5437 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5437
Description  NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5437 Datasheet(HTML) 1 Page - NEC

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©
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
× 0.8 mm × 0.59 mm: TYP.)
Contains same chip as 2SC5195
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5437
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13146EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
3
2
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 5 V, IE = 0
100
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
100
nA
DC Current Gain
hFE
VCE = 1 V, IC = 3 mANote 1
80
145
Reverse Transfer Capacitance
Cre
VCB = 1 V, IE = 0, f = 1 MHzNote 2
0.7
0.8
pF
Gain Bandwidth Product (1)
fT (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
4.0
5.0
GHz
Gain Bandwidth Product (2)
fT (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
9.5
GHz
Insertion Power Gain (1)
|S21e|2 (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
3.0
4.0
dB
Insertion Power Gain (2)
|S21e|2 (2)
VCE = 3 V, IC = 20 mA, f = 2 GHz
8.0
dB
Noise Figure (1)
NF (1)
VCE = 1 V, IC = 3 mA, f = 2 GHz
1.9
2.5
dB
Noise Figure (2)
NF (2)
VCE = 3 V, IC = 7 mA, f = 2 GHz
1.7
dB
Notes 1. Pulse measurement PW
≤ 350
µs, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.


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