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MRF275G Datasheet(PDF) 17 Page - M/A-COM Technology Solutions, Inc.
MA-COM [M/A-COM Technology Solutions, Inc.]
MRF275G Datasheet(HTML) 17 Page - M/A-COM Technology Solutions, Inc.
/ 19 page
The RF MOSFET Line
150W, 500MHz, 28V
Released - Rev. 07.07
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
The physical structure of a MOSFET results in capaci-
tors between the terminals. The metal oxide gate struc-
ture determines the capacitors from gate–to–drain (Cgd),
and gate–to–source (Cgs). The PN junction formed dur-
ing the fabrication of the MOSFET results in a junction
capacitance from drain–to–source (Cds).
These capacitances are characterized as input (Ciss),
output (Coss) and reverse transfer (Crss) capacitances
on datasheets. The relationships between the inter–
terminal capacitances and those given on data sheets
are shown below. The Ciss can be specified in two ways:
Drain shorted to source and positive voltage at
Positive voltage of the drain in respect to source
and zero volts at the gate. In the latter case the
numbers are lower. However, neither method
represents the actual operating conditions in RF
The Ciss given in the electrical characteristics table
was measured using method 2 above. It should be noted
that Ciss, Coss, Crss are measured at zero drain current
and are provided for general information about the de-
vice. They are not RF design parameters and no attempt
should be made to use them as such.
One figure of merit for a FET is its static resistance in
the full–on condition. This on–resistance, VDS(on), oc-
curs in the linear region of the output characteristic and is
specified under specific test conditions for gate–source
voltage and drain current. For MOSFETs, VDS(on) has a
positive temperature coefficient and constitutes an impor-
tant design consideration at high temperatures, because
it contributes to the power dissipation within the device.
The gate of the MOSFET is a polysilicon material, and
is electrically isolated from the source by a layer of oxide.
The input resistance is very high — on the order of 109
ohms — resulting in a leakage current of a few nanoam-
peres. Gate control is achieved by applying a positive
voltage slightly in excess of the gate–to–source threshold
Gate Voltage Rating — Never exceed the gate volt-
age rating (or any of the maximum ratings on the front
page). Exceeding the rated VGS can result in permanent
damage to the oxide layer in the gate region.
RF POWER MOSFET CONSIDERATIONS
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