STL120N2VH5 datasheet(4/18 Pages) STMICROELECTRONICS

Part #	STL120N2VH5

Description	N-channel 20 V, 0.002, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package

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Electrical characteristics

STL120N2VH5

4/18

Doc ID 15603 Rev 2

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 5.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

20

V

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 20 V

VDS =20 V, TC = 125 °C

1

10

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 8 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

0.70

V

RDS(on)

Static drain-source on

resistance

VGS = 4.5 V, ID = 14 A

VGS = 2.5 V, ID = 14 A

0.002

0.0028

0.003

0.004

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 15 V, f = 1 MHz,

VGS = 0

-

4660

870

130

-

pF

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 10 V, ID = 14 A

RG =4.7 Ω VGS = 4.5 V

(see Figure 13)

-

21

60

76

55

-

ns

Qg

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 10 V, ID = 28 A,

VGS = 2.5 V

(see Figure 14)

-

29

9.8

13

-

nC

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