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TA32910Q Datasheet(PDF) 4 Page - Dynex Semiconductor |
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TA32910Q Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 10 page TA329..Q 4/10 CURVES Fig.1 Energy per pulse for sinusoidal pulses. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1 µF, R = 33Ω. 4. Double side cooled. Fig.2 Maximum allowable peak on-state current vs pulse width for Tcase = 65˚C. Notes: 1. VD ≤ 600V. 2. VR = DF451 Diode voltage drop. 3. R.C. snubber. C = 0.1 µF, R = 33Ω. 4. Double side cooled. |
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