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2SC5433 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5433
Description  NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
Logo NEC - NEC

2SC5433 Datasheet(HTML) 1 Page - NEC

  2SC5433 Datasheet HTML 1Page - NEC 2SC5433 Datasheet HTML 2Page - NEC 2SC5433 Datasheet HTML 3Page - NEC 2SC5433 Datasheet HTML 4Page - NEC 2SC5433 Datasheet HTML 5Page - NEC 2SC5433 Datasheet HTML 6Page - NEC 2SC5433 Datasheet HTML 7Page - NEC 2SC5433 Datasheet HTML 8Page - NEC  
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©
1998
PRELIMINARY DATA SHEET
FEATURE
Ultra super mini-mold thin flat package
(1.4 mm
× 0.8 mm × 0.59 mm: TYP.)
Contains same chip as 2SC5007
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
SILICON TRANSISTOR
2SC5433
NPN EPITAXIAL SILICON TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Document No. P13077EJ1V0DS00 (1st edition)
Date Published February 1998 N CP(K)
Printed in Japan
PACKAGE DIMENSIONS (in mm)
1.4 ± 0.05
0.8 ± 0.1
1
3
2
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB = 10 V, IE = 0
800
nA
Emitter Cut-off Current
IEBO
VEB = 1 V, IC = 0
800
nA
DC Current Gain
hFE
VCE = 3 V, IC = 7 mANote 1
80
145
Gain Bandwidth Product
fT
VCE = 3 V, IC = 7 mA, f = 1 GHz
4.5
7.0
GHz
Reverse Transfer Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.9
pF
Insertion Power Gain
|S21e|2
VCE = 3 V, IC = 7 mA, f = 1 GHz
10.0
12.0
dB
Noise Figure
NF
VCE = 3 V, IC = 7 mA, f = 1 GHz
1.4
2.7
dB
Notes 1. Pulse measurement PW
≤ 350
µs, duty cycle ≤ 2 %
2. Collector to base capacitance measured by capacitance meter (automatic balance bridge method) when
emitter pin is connected to the guard pin.
Because this product uses high-frequency process, avoid excessive input of static electricity, etc.
The information in this document is subject to change without notice.


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