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RD65FV04 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # RD65FV04
Description  Rectifier Diode Target Information
Download  7 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

RD65FV04 Datasheet(HTML) 3 Page - Dynex Semiconductor

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RD65FV
3/7
www.dynexsemi.com
Units
mA
A
µC
V
m
Parameter
Thermal resistance - junction to case
Thermal resistance - case to heatsink
Virtual junction temperature
Storage temperature range
Clamping force
Parameter
Surge (non-repetitive) forward current
I2t for fusing
Surge (non-repetitive) forward current
I2t for fusing
Test Conditions
10ms half sine, T
case = 175˚C
V
R = 50% VRRM - 1/4 sine
10ms half sine, T
case = 175˚C
V
R = 0
Symbol
I
FSM
I2t
I
FSM
I2t
SURGE RATINGS
Units
kA
A2s
kA
A2s
Max.
130
84.5 x 106
162
132 x 106
Test Conditions
At V
RRM, Tcase = 200˚C
I
F = 2000A, dIRR/dt = 3A/µs,
T
case = 200˚C, VR = 100V
At T
vj = 200˚C
At T
vj = 200˚C
Parameter
Peak reverse current
Peak reverse recovery current
Total stored charge
Threshold voltage
Slope resistance
CHARACTERISTICS
Symbol
I
RM
I
rr
Q
S
V
TO
r
T
Max.
150
230
39
0.6
0.0225
Min.
-
-
-
-
-
Test Conditions
Double side cooled
DC
Single side cooled
Anode DC
Cathode DC
Clamping force 43.0kN
Double side
(with mounting compound)
Single side
Forward (conducting)
Reverse (blocking)
THERMAL AND MECHANICAL RATINGS
Symbol
R
th(j-c)
R
th(c-h)
T
vj
T
stg
F
m
Units
˚CW
˚CW
˚CW
˚CW
˚CW
˚C
˚C
˚C
kN
Max.
0.0075
0.015
0.015
0.002
0.004
225
200
200
47.3
Min.
-
-
-
-
-
-
-
–55
38.7


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