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2SD1313 Datasheet(PDF) 2 Page - Savantic, Inc. |
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2SD1313 Datasheet(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1313 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 350 V VCEsat Collector-emitter saturation voltage IC=15A ;IB=3A 1.0 V VBEsat Base-emitter saturation voltage IC=15A ;IB=3A 1.7 V ICBO Collector cut-off current VCB=800V; IE=0 1 mA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=1A ; VCE=5V 15 hFE-2 DC current gain IC=25A ; VCE=5V 6 fT Transition frequency IC=1A ; VCE=10V 6 MHz COB Collector output capacitance f=1MHz;VCB=50V,f=1MHz 170 pF Switching times ton Turn-on time 0.8 µs tstg Storage time 3.0 µs tf Fall time IC=15A ;IB1=-IB2=3A VCC@200V,RL=13.3A 0.5 µs |
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