DATA SHEET

Silicon Transistor

2SC5338

NPN EPITAXIAL SILICON TRANSISTOR

HIGH FREQUENCY LOW DISTORTION AMPLIFIER

1996

©

Document No. P10940EJ1V0DS00 (1st edition)

Date Published April 1996 P

Printed in Japan

PRELIMINARY DATA SHEET

DESCRIPTION

The 2SC5338 is designed for a low distortion and low noise RF amplifier with an operation on the low supply

FEATURES

PACKAGE DIMENSIONS

•

High gain

(in millimeters)

•

Low distortion and low voltage

Ω

•

New power mini-mold package version of a 4-pin type

gain-improved on the 2SC4703

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

25

V

Collector to Emitter Voltage

12

V

Emitter to Base Voltage

2.5

V

Collector Current

150

mA

Total Power Dissipation

Note1

1.8

W

Junction Temperature

150

°C

Storage Temperature

–65 to +150

°C

Note 1. 0.7 mm

1.6±0.2

1.5±0.1

0.25±0.02

0.42

±0.06

0.46

±0.06

3.0

1.5

0.42

±0.06

PIN CONNECTIONS

E: Emitter

C: Collector

B: Base

C

EB

E

4.5±0.1