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GP801DDM18 Datasheet(PDF) 5 Page - Dynex Semiconductor

Part # GP801DDM18
Description  Hi-Reliability Dual Switch Low VCESAT IGBT Module
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP801DDM18 Datasheet(HTML) 5 Page - Dynex Semiconductor

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GP801DDM18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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TYPICAL CHARACTERISTICS
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 25˚C
1000
800
Fig.3 Typical output characteristics
Fig.4 Typical output characteristics
0
200
400
600
1200
1400
1600
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 125˚C
1000
800
Fig.5 Typical switching energy vs collector current
0800
100
200
Collector current, IC - (A)
0
100
700
Tcase = 125˚C
VGE = ±15V
VCE = 800V
Rg = 2.2 OhmΩ
EOFF
EON
EREC
200
300
400
500
600
1000
800
900
300
400
500
600
700
Fig.6 Typical switching energy vs gate resistance
0
200
400
600
800
1000
1200
1400
01
2
3
4
5
6
7
8
9
10
Gate resistance, RG - (Ohms)
EON
EOFF
EREC
Tcase = 125˚C
VGE = ±15V
VCE = 900V
IC = 800A


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