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GP400DDM12 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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GP400DDM12 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 9 page GP400DDM12 29 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode - Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor (per arm) Thermal resistance - diode (per arm) Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque THERMAL AND MECHANICAL RATINGS ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. T case = 25˚C unless stated otherwise Symbol V CES V GES I C I C(PK) P max V isol Test Conditions V GE = 0V - T case = 80˚C 1ms, T case = 105˚C T case = 25˚C, Tj = 150˚C Commoned terminals to base plate. AC RMS, 1 min, 50Hz Units V V A A W V Max. 1200 ±20 400 800 3470 4000 Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Isolation voltage Symbol R th(j-c) R th(j-c) R th(c-h) T j T stg - Units ˚C/kW ˚C/kW ˚C/kW ˚C ˚C ˚C Nm Nm Nm Max. 36 80 8 150 125 125 5 2 10 Min. - - - - - –40 - - - |
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