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GP1600FSS12 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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GP1600FSS12 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 11 page GP1600FSS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 2/11 THERMAL AND MECHANICAL RATINGS Symbol Conditions DC junction to case oC/kW 11 Max. - Min. Parameter Units R th(j-c) Thermal resistance - transistor T stg Storage temperature range Transistor oC 150 125 - –40 R th(c-h) Thermal resistance - Case to heatsink (per module) Mounting torque 5Nm (with mounting grease) 8 - - Mounting - M6 Nm 5 - - oC/kW T j Junction temperature oC Screw torque Diode oC 125 - Electrical connections - M4 Nm 2 - Electrical connections - M8 Nm 10 - Thermal resistance - diode DC junction to case oC/kW 20 - - R th(j-c) V CES Collector-emitter voltage - DC, T case = 25˚C 2100 Test Conditions Symbol I C Gate-emitter voltage V GE = 0V 1200 Units V ±20 Max. Parameter T case = 25˚C unless stated otherwise. Collector current 11400 Maximum power dissipation P max Commoned terminals to base plate. AC RMS, 1 min, 50Hz Isolation voltage V isol V 2500 V V GES A I C(PK) W T case = 25˚C (Transistor) ABSOLUTE MAXIMUM RATINGS Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may inlcude potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. DC, T case = 75˚C 1600 A 1ms, T case = 75˚C A 3200 |
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