GP1200ESM33 datasheet(6/9 Pages) DYNEX

Part #	GP1200ESM33

Description	High Reliability Single Switch IGBT Module Advance Information

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Manufacturer	DYNEX [Dynex Semiconductor]

Direct Link	http://www.dynexsemi.com

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GP1200ESM33

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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Fig.7 Forward bias safe operating area

Fig.8 Transient thermal impedance

Fig.9 DC current rating vs case temperature

Fig.10 Typical input capacitance

1

10

100

1000

10000

1

10

100

1000

10000

Collector-emitter voltage, Vce - (V)

IC max. (single pulse)

I

C max.

DC

(continuous)

t

p

=

1ms

tp = 100µs

Conditions:

Tvj = 125˚C, Tcase = 80˚C

0.1

1

10

100

0.001

0.01

1

0.1

10

Pulse width, tp - (ms)

Diode

Transistor

0

200

400

600

800

1000

1400

1600

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2000

2200

1200

2400

0

20

40

60

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100

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160

Case temperature, Tcase - (˚C)

200

240

280

320

360

400

220

260

300

340

380

010

20

30

40

50

60

Collector-emitter voltage, VCE - (V)

Tvj = 25˚C, VCE = 25V

VGE = 0V, f = 1MHz

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