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DS501ST02 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DS501ST02 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 6 page 4/5 www.dynexsemi.com DS501ST 110 1 2 3 5 10 20 50 0 5 10 15 20 250 150 350 ms Cycles at 50Hz Duration I2t = Î2 x t 2 450 200 300 400 I2t CURVES Fig.2 Maximum (limit) forward characteristics 0 500 1000 1500 2000 2500 3000 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 Instantaneous forward voltage, VF - (V) Tj = 175ºC Tj = 25ºC Fig.3 Power dissipation curves 0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800 Mean on-state current, IT(AV) - (A) dc 1/2 wave 3 phase 6 phase Fig.4 Surge (non-repetitive) forward current vs time (with 50% V RRM , T case = 175˚C) 10 1 0.1 0.01 0.001 Time - (s) 1.0 0.1 0.01 0.001 Double side cooled Anode side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.070 0.080 0.105 0.1425 Single side 0.140 0.150 0.175 0.2125 Fig.5 Maximum (limit) transient thermal impedance - junction to case - (˚C/W) |
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