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DS2101SY12 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DS2101SY12 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 7 page 5/7 www.dynexsemi.com DS2101SY Fig.4 Total stored charge Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.5 Surge (non-repetitive) forward current vs time (with 50% V RRM at T case 190˚C) 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 100000 10000 1000 Conditions: Tj = 175˚C VR = 100V IF = 2000A IRM IF dIF/dt QS 110 1 2 3 5 10 20 50 0 25 50 75 100 125 150 175 20 10 25 30 ms Cycles at 50Hz Duration I2t = Î2 x t 2 I2t 15 10 1 0.1 0.01 0.001 Time - (s) 0.1 0.01 0.001 0.0001 Double side cooled Anode side cooled 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Single side 0.019 0.020 0.0207 0.0234 |
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