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DS2012SF58 Datasheet(PDF) 5 Page - Dynex Semiconductor |
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DS2012SF58 Datasheet(HTML) 5 Page - Dynex Semiconductor |
5 / 7 page 5/7 www.dynexsemi.com DS2012SF Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Fig.7 Maximum (limit) transient thermal impedance - junction to case Fig.6 Surge (non-repetitive) forward current vs time (with 50% V RRM at T case 175˚C) 0.1 0.01 0.001 0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Single side 0.038 0.040 0.042 0.043 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 10000 1000 100 Conditions: Tj = 150˚C VR = 100V IF = 2000A IRM IF dIF/dt QS 0.1 1.0 10 100 Rate of decay of forward current, dIF/dt - (A/µs) 1000 100 10 Conditions: Tj = 150˚C VR = 100V IF = 2000A 1 101 2 3 510 20 50 0 5 10 15 20 25 ms Cycles at 50Hz Duration 0.50 0.75 1.00 I2t = I2 x t 2 ^ I2t |
Similar Part No. - DS2012SF58 |
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Similar Description - DS2012SF58 |
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