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DS1104SG25 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DS1104SG25 Datasheet(HTML) 4 Page - Dynex Semiconductor |
4 / 7 page 4/7 www.dynexsemi.com DS1104SG CHARACTERISTICS Forward voltage Peak reverse current Parameter µC 1600 At T vj = 175˚C - Q S Total stored charge I F = 1000A, dIrr/dt = 3A/µs T case = 175˚C, VR = 100V Symbol V FM I RRM I rr Reverse recovery current V TO Threshold voltage r T Slope resistance 0.31 m Ω At T vj = 175˚C - 0.67 V -85 A - At V RRM, Tcase = 175 oC- 50 mA - 1.3 V At 1800A peak, T case = 25 oC Conditions Min. Max. Units CURVES Fig.2 Maximum (limit) forward characteristics Fig.3 Dissipation curves V FM Equation:- V FM = A + Bln (I F ) + C.I F +D. √I F Where A = 0.82527 B = –0.07771 C = 0.00012 D = 0.019599 these values are valid for T j = 125˚C for I F 500A to 2500A 0.5 1.0 1.5 2.0 Instantaneous forward voltage, VF - (V) 0 500 1000 1500 2000 2500 Measured under pulse conditions Tj = 25˚C Tj = 175˚C 0 1000 2000 3000 Mean forward current, IF(AV) - (A) 0 1000 2000 3000 4000 dc Half wave 3 phase 6 phase |
Similar Part No. - DS1104SG25 |
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Similar Description - DS1104SG25 |
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