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DS1109SG49 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DS1109SG49 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 7 page 3/7 www.dynexsemi.com DS1109SG SURGE RATINGS Conditions 10ms half sine; T case = 150 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 150 oC V R = 0 Max. Units Symbol Parameter I FSM Surge (non-repetitive) forward current I 2tI2t for fusing I FSM Surge (non-repetitive) forward current I 2t I 2t for fusing A 2s 11.5 kA 422 x 103 A2s 9.2 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.064 Anode dc Clamping force 12.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.008 Double side - T vj Virtual junction temperature Single side Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Forward (conducting) - 160 oC - 0.016 oC/W oC/W Cathode dc - 0.064 oC/W Double side cooled - 0.032 oC/W 660 x 10 3 175 oC -55 kN 13.5 11.5 oC 150 - Reverse (blocking) Storage temperature range Clamping force - T stg |
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