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SI7112DN Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI7112DN Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 12 page www.vishay.com 2 Document Number: 72864 S11-0855-Rev. G, 02-May-11 Vishay Siliconix Si7112DN This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note: a. Surface mounted on 1" x 1" FR4 board. Notes: a. Pulse test; pulse width 300 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t 10 s RthJA 24 33 °C/W Steady State 65 81 Maximum Junction-to-Foot (Drain) Steady State RthJC 1.9 2.4 MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.6 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 5 On-State Drain Currenta ID(on) VDS 5 V, VGS = 10 V 40 A Drain-Source On-State Resistancea RDS(on) VGS = 10 V, ID = 17.8 A 0.0060 0.0075 VGS = 4.5 V, ID = 17 A 0.0065 0.0082 Forward Transconductancea gfs VDS = 15 V, ID = 17.8 A 97 S Diode Forward Voltagea VSD IS = 3.2 A, VGS = 0 V 0.7 1.2 V Dynamicb Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 2610 pF Output Capacitance Coss 340 Reverse Transfer Capacitance Crss 145 Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 17.8 A 18 27 nC Gate-Source Charge Qgs 6.2 Gate-Drain Charge Qgd 3.1 Gate Resistance Rg f = 1 MHz 0.5 1.2 1.8 Turn-On Delay Time td(on) VDD = 15 V, RL = 15 ID 1 A, VGEN = 10 V, Rg = 6 10 15 ns Rise Time tr 10 15 Turn-Off Delay Time td(off) 65 100 Fall Time tf 10 15 Body Diode Reverse Recovery Time trr IF = 3.2 A, dI/dt = 100 A/µs 30 60 Body Diode Reverse Recovery Charge Qrr 18 nC |
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