SI7112DN datasheet(2/12 Pages) VISHAY

Part #	SI7112DN

Description	N-Channel 30 V (D-S) Fast Switching MOSFET

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Document Number: 72864

S11-0855-Rev. G, 02-May-11

Vishay Siliconix

Si7112DN

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Note:

a. Surface mounted on 1" x 1" FR4 board.

Notes:

a. Pulse test; pulse width

 300 µs, duty cycle  2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta

t

 10 s

RthJA

24

33

°C/W

Steady State

65

81

Maximum Junction-to-Foot (Drain)

Steady State

RthJC

1.9

2.4

MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 µA

0.6

1.5

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 12 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 30 V, VGS = 0 V

1

µA

VDS = 30 V, VGS = 0 V, TJ = 55 °C

5

On-State Drain Currenta

ID(on)

VDS 5 V, VGS = 10 V

40

A

Drain-Source On-State Resistancea

RDS(on)

VGS = 10 V, ID = 17.8 A

0.0060

0.0075



VGS = 4.5 V, ID = 17 A

0.0065

0.0082

Forward Transconductancea

gfs

VDS = 15 V, ID = 17.8 A

97

S

Diode Forward Voltagea

VSD

IS = 3.2 A, VGS = 0 V

0.7

1.2

V

Dynamicb

Input Capacitance

Ciss

VDS = 15 V, VGS = 0 V, f = 1 MHz

2610

pF

Output Capacitance

Coss

340

Reverse Transfer Capacitance

Crss

145

Total Gate Charge

Qg

VDS = 15 V, VGS = 4.5 V, ID = 17.8 A

18

27

nC

Gate-Source Charge

Qgs

6.2

Gate-Drain Charge

Qgd

3.1

Gate Resistance

Rg

f = 1 MHz

0.5

1.2

1.8



Turn-On Delay Time

td(on)

VDD = 15 V, RL = 15 

ID  1 A, VGEN = 10 V, Rg = 6 

10

15

ns

Rise Time

tr

10

15

Turn-Off Delay Time

td(off)

65

100

Fall Time

tf

10

15

Body Diode Reverse Recovery Time

trr

IF = 3.2 A, dI/dt = 100 A/µs

30

60

Body Diode Reverse Recovery Charge

Qrr

18

nC

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