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2SC5185 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5185
Description  NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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2SC5185 Datasheet(HTML) 1 Page - NEC

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©
1994
DATA SHEET
SILICON TRANSISTOR
2SC5185
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
FEATURES
Low Noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Super Mini-Mold package
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5185-T1
Embossed tape, 8 mm wide,
pins No. 3 (base), and No. 4
(emitter) facing the perforations
2SC5185-T2
3 000 units/reel
Embossed tape, 8 mm wide,
pins No. 1 (collector) and No. 2
(emitter) facing the perforations
* Contact your NEC sales representative to order samples for
evaluation.
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
30
mA
Total Power Dissipation
PT
90
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
Caution; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
2.1± 0.2
1.25 ± 0.1
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Document No. P12109EJ2V0DS00 (2nd edition)
(Previous No. TC-2482)
Date Published November 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(Units: mm)


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