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DIM1200FSM17-A000 Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DIM1200FSM17-A000 Datasheet(HTML) 3 Page - Dynex Semiconductor |
3 / 10 page DIM1200FSM17-A000 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com THERMAL AND MECHANICAL RATINGS Internal insulation material: AlN Baseplate material: AlSiC Creepage distance: 20mm Clearance: 10mm CTI (Critical Tracking Index): 175 Test Conditions Continuous dissipation - junction to case Continuous dissipation - junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode - Mounting - M6 Electrical connections - M4 Electrical connections - M8 Parameter Thermal resistance - transistor Thermal resistance - diode Thermal resistance - case to heatsink (per module) Junction temperature Storage temperature range Screw torque Symbol R th(j-c) R th(j-c) R th(c-h) T j T stg - Units ˚C/kW ˚C/kW ˚C/kW ˚C ˚C ˚C Nm Nm Nm Max. 12 20 8 150 125 125 5 2 10 Typ. - - - - - - - - - Min. - - - - - –40 - - - |
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