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DGT409BCA Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DGT409BCA Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 11 page  DGT409BCA 3/11 THERMAL RATINGS AND MECHANICAL DATA Symbol Parameter Conditions Max. Min. R th(c-hs) Contact thermal resistance R th(j-hs) - - 0.124 - 0.009 oC/W per contact Cathode side cooled Double side cooled Units - 0.046 oC/W Anode side cooled oC/W 0.073 Virtual junction temperature T OP/Tstg Operating junction/storage temperature range - Clamping force - 115 15.0 11.0 -40 kN oC/W Clamping force 12.0kN With mounting compound DC thermal resistance - junction to heatsink surface T vj 115 oC oC CHARACTERISTICS Conditions Peak reverse current On-state voltage V TM Peak off-state current Reverse gate cathode current 50 - Turn-on energy Gate trigger current Delay time Rise time Fall time Gate controlled turn-off time Turn-off energy Storage time Turn-off gate charge Total turn-off gate charge Peak reverse gate current - 3600 V RGM = 16V, No gate/cathode resistor µC I T = 800A, VDM = 3000V Snubber Cap C S = 2µF, di GQ/dt = 20A/µs T j = 115 oC unless stated otherwise Symbol Parameter I DM I RRM V GT Gate trigger voltage I GT I RGM E ON t d t r E OFF t gs t gf t gq Q GQ Q GQT I GQM Min. Max. Units -4 V V DRM = 6500V, V RG = 0V - 100 mA At V RRM = 6500V - 100 mA V D = 24V, IT = 100A, Tj = 25 oC- 1 V V D = 24V, IT = 100A, Tj = 25 oC- 2 A mA mJ 2500 - V D = 3000V I T = 400A, dIT/dt = 150A/µs I FG = 20A, tr < 1.5µs µs 3 - -7 µs - 2500 mJ µs µs µs - 7200 µC - 350 A At 200A peak, I G(ON) = 4A d.c. See Figs. 16 and 17 See Figs. 16 and 17 See Figs. 16 and 17 |
Similar Part No. - DGT409BCA |
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Similar Description - DGT409BCA |
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