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2SC5184 Datasheet(PDF) 2 Page - NEC

Part No. 2SC5184
Description  NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5184 Datasheet(HTML) 2 Page - NEC

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2SC5184
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 20 mA*1
Insertion Power Gain (1)
|S21e|2
7
8.5
dB
VCE = 2 V, IC = 20 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
6
7.5
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure (1)
NF
1.3
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.3
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
9
11
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
7
9
GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Feedback Capacitance
Cre
0.4
0.8
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1
Measured with pulses: Pulse width
≤ 350
µs, duty clcye ≤ 2 %, pulsed.
*2
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
T86
hFE
70 to 140


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