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DG646BH25 Datasheet(PDF) 2 Page - Dynex Semiconductor

Part No. DG646BH25
Description  Gate Turn-off Thyristor
Download  19 Pages
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Maker  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
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DG646BH25 Datasheet(HTML) 2 Page - Dynex Semiconductor

 
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DG646BH25
2/19
SURGE RATINGS
Conditions
18.0
1.62 x 106
kA
A2s
Surge (non-repetitive) on-state current
I2t for fusing
10ms half sine. T
j = 125
oC
10ms half sine. T
j =125
oC
di
T/dt
Critical rate of rise of on-state current
300
135
V/
µs
Max.
Units
Rate of rise of off-state voltage
dV
D/dt
1000
V/
µs
To 66% V
DRM; VRG = -2V, Tj = 125
oC
I
TSM
Symbol
Parameter
I2t
V
D = 1500V, IT = 2000A, Tj = 125
oC, I
FG > 30A,
Rise time > 1.0
µs
A/
µs
To 66% V
DRM; RGK ≤ 1.5Ω, Tj = 125
oC
GATE RATINGS
Symbol
Parameter
Conditions
V
Units
Max.
16
15
Min.
-
20
-
Peak reverse gate voltage
Peak forward gate current
Average forward gate power
Peak reverse gate power
Rate of rise of reverse gate current
Minimum permissable on time
Minimum permissable off time
19
60
-
50
30
-
-
µs
100
100
V
RGM
This value maybe exceeded during turn-off
I
FGM
P
FG(AV)
P
RGM
di
GQ/dt
t
ON(min)
t
OFF(min)
µs
A/
µs
kW
W
A
THERMAL RATINGS AND MECHANICAL DATA
Symbol
Parameter
Conditions
Max.
Min.
R
th(c-hs)
Contact thermal resistance
R
th(j-hs)
-
-
0.045
-
0.006
oC/W
per contact
Cathode side cooled
Double side cooled
Units
-
0.018
oC/W
Anode side cooled
oC/W
0.03
Virtual junction temperature
T
OP/Tstg
Operating junction/storage temperature range
-
Clamping force
-
125
22.0
18.0
-40
kN
oC/W
Clamping force 20.0kN
With mounting compound
DC thermal resistance - junction to heatsink
surface
T
vj
125
oC
oC
-
-
L
S
Peak stray inductance in snubber circuit
nH
200
I
T = 2000A, VDM = 2500V, Tj = 125˚C,
di
GQ/dt = 40A/µs, Cs = 2.0µF


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