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DG306AE25 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part No. DG306AE25
Description  Gate Turn-off Thyristor
Download  19 Pages
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Maker  DYNEX [Dynex Semiconductor]
Homepage  http://www.dynexsemi.com
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DG306AE25 Datasheet(HTML) 3 Page - Dynex Semiconductor

 
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DG306AE25
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CHARACTERISTICS
Conditions
Peak reverse current
On-state voltage
V
TM
Peak off-state current
Reverse gate cathode current
50
-
Turn-on energy
Gate trigger current
Delay time
Rise time
Fall time
Gate controlled turn-off time
Turn-off energy
Storage time
Turn-off gate charge
Total turn-off gate charge
Peak reverse gate current
-
1300
V
RGM = 16V, No gate/cathode resistor
µC
I
T =600A, VDM = 2000V
Snubber Cap Cs = 1.0
µF,
di
GQ/dt = 15A/µs
T
j = 125
oC unless stated otherwise
Symbol
Parameter
I
DM
I
RRM
V
GT
Gate trigger voltage
I
GT
I
RGM
E
ON
t
d
t
r
E
OFF
t
gs
t
gf
t
gq
Q
GQ
Q
GQT
I
GQM
Min.
Max.
Units
-
2.75
V
V
DRM = 2500V,
V
RG = 0V
-
50
mA
At V
RRM
-50
mA
V
D = 24V, IT = 100A, Tj = 25
oC
-
0.9
V
V
D = 24V, IT = 100A, Tj = 25
oC
-
1.0
A
mA
mJ
515
-
V
D = 2000V
I
T = 600A, dIT/dt = 300A/µs
I
FG = 20A, rise time < 1.0µs
µs
1.5
-
-
3.0
µs
-
1000
mJ
-
11.4
µs
µs
1.5
-
µs
12.9
-
-
2600
µC
-
190
A
At 600A peak, I
G(ON) = 2A d.c.


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