SUM33N20-60P datasheet(1/6 Pages) VISHAY

Part #	SUM33N20-60P

Description	N-Channel 200-V (D-S) 175 C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUM33N20-60P

New Product

Document Number: 74291

S-62209-Rev. A, 30-Oct-06

www.vishay.com

1

N-Channel 200-V (D-S) 175 °C MOSFET

FEATURES

•

TrenchFET® Power MOSFETS

•

150 °C Junction Temperature

•

100 % UIS and Rg Tested

APPLICATIONS

•

Power Supply

•

Lighting

•

Industrial

PRODUCT SUMMARY

V(BR)DSS (V)

rDS(on) (Ω)ID (A)

Qg (Typ)

200

0.059 at VGS = 15 V

33

53

0.060 at VGS = 10 V

33

TO-263

S

D

G

Top View

Ordering Information: SUM33N20-60P-E3 (Lead (Pb)-free)

N-Channel MOSFET

G

D

S

Notes:

a. Duty cycle

≤ 1 %.

b. See SOA curve for voltage derating.

c. When Mounted on 1" square PCB (FR-4 material).

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

200

V

Gate-Source Voltage

VGS

± 25

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

33

A

TC = 100 °C

20.8

Pulsed Drain Current

IDM

80

Single Pulse Avalanche Current

L = 0.1 mH

IAS

20

Single Pulse Avalanche Energya

EAS

20

mJ

Maximum Power Dissipationa

TC = 25 °C

PD

156b

W

TA = 25 °C

c

3.12

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient (PCB Mount)c

RthJA

40

°C/W

Junction-to-Case (Drain)

RthJC

0.8

RoHS

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