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2SC5181 Datasheet(PDF) 2 Page - NEC

Part No. 2SC5181
Description  NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5181 Datasheet(HTML) 2 Page - NEC

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2SC5181
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
CONDITIONS
Collector Cutoff Current
ICBO
100
nA
VCB = 5 V, IE = 0
Emitter Cutoff Current
IEBO
100
nA
VEB = 1 V, IC = 0
DC Current Gain
hFE
70
140
VCE = 2 V, IC = 7 mA*1
Insertion Power Gain (1)
|S21e|2
8.0
10.5
dB
VCE = 2 V, IC = 7 mA, f = 2 GHz
Insertion Power Gain (2)
|S21e|2
7.0
9.0
dB
VCE = 1 V, IC = 5 mA, f = 2 GHz
Noise Figure (1)
NF
1.5
2.0
dB
VCE = 2 V, IC = 3 mA, f = 2 GHz
Noise Figure (2)
NF
1.5
2.0
dB
VCE = 1 V, IC = 3 mA, f = 2 GHz
Gain Bandwidth Product (1)
fT
10
13
GHz
VCE = 2 V, IC = 7 mA, f = 2 GHz
Gain Bandwidth Product (2)
fT
8.5
12
GHz
VCE = 1 V, IC = 5 mA, f = 2 GHz
Feedback Capacitance
Cre
0.4
0.6
pF
VCB = 2 V, IE = 0 mA, f = 1 MHz*2
*1.
Measured with pulses: Pulse width
≤ 350
µs, duty cycle ≤ 2 %, pulsed
*2.
Measured with a three-terminal bridge. The emitter and case terminal are connected to the guard terminal
of the bridge.
hFE Class
Class
FB
Marking
84
hFE
70 to 140


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