www.dynexsemi.com

6/8

DCR806SG

Fig.6 Maximum (limit) transient thermal impedance -

junction to case

Fig.7 Surge (non-repetitive) on-state current vs time (with

50% V

RRM

at T

case

125˚C)

20

15

10

5

0

110

1

2

3 4 5

50

ms

Cycles at 50Hz

Duration

250

300

2

350

25

400

10

20 30

0.1

0.01

0.001

0.001

0.01

0.1

1.0

10

Time - (s)

Anode side cooled

Double side cooled

Conduction

Effective thermal resistance

Junction to case ˚C/W

Double side

0.032

0.034

0.044

0.057

Anode side

0.064

0.066

0.076

0.089

d.c.

Halfwave

3 phase 120˚

6 phase 60˚

Fig.4 Stored charge

Fig.5 Gate characteristics

0.1

1.0

10

100

Rate of decay of on-state current dI/dt - (A/µs)

10000

1000

100

Conditions:

Max. value

Min. value

I

RR

Q

S

I

T

dI/dt

10

1

0.1

0.01

0.001

100

10

1

0.1

Region of certain

triggering

Upper

limit

99%

Low

er limit

99%

Pulse width

µs

100

200

500

1ms

10ms

Frequency Hz

50

150

150

150

150

20

100

150

150

150

100

-

400

150

125

100

25

-