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DCR820SG Datasheet(PDF) 3 Page - Dynex Semiconductor |
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DCR820SG Datasheet(HTML) 3 Page - Dynex Semiconductor |
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3 / 10 page  3/10 DCR820SG www.dynexsemi.com SURGE RATINGS Conditions 10ms half sine; T case = 125 oC V R = 50% VRRM - 1/4 sine 10ms half sine; T case = 125 oC V R = 0 Max. Units Symbol Parameter I TSM Surge (non-repetitive) on-state current I 2tI2t for fusing I TSM Surge (non-repetitive) on-state current I 2t I 2t for fusing 180 x 10 3 A 2s 6.0 kA 115 x 103 A2s 4.8 kA THERMAL AND MECHANICAL DATA dc Conditions Min. Max. Units oC/W - 0.064 Anode dc Clamping force 12.0kN with mounting compound Thermal resistance - case to heatsink R th(c-h) 0.008 Double side - 125 oC T vj Virtual junction temperature T stg Storage temperature range Reverse (blocking) Single side - Thermal resistance - junction to case R th(j-c) Single side cooled Symbol Parameter Clamping force 10.8 13.2 kN –55 150 oC - On-state (conducting) - 135 oC - 0.016 oC/W oC/W Cathode dc - 0.064 oC/W Double side cooled - 0.032 oC/W |
Similar Part No. - DCR820SG |
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Similar Description - DCR820SG |
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