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DCR720E16 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR720E16 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 9 page DCR720E 6/9 www.dynexsemi.com Fig.4 Stored charge Fig.5 Gate characteristics Fig.6 Maximum (limit) transient thermal impedance - junction to case (˚C/W) Fig.7 Sub-cycle surge currents 0 5 10 15 20 25 110 Pulse lenght, half sine wave (ms) 0 0.15 0.3 0.45 0.6 0.75 9 8 7 6 5 4 3 2 ITSM (VR = 0) ITSM (VR = 50% VRRM) I2t (VR = 0) I2t (VR = 50% VRRM) 10000 1000 100 0.1 1.0 10 100 Rate of decay of on-state current, dIT/dt - (A/µs) IT = 1500A IT = 500A Conditions: Tj = 125˚C VR = 50V tp = 1ms 0.25xIRM QR tp IT dIT/dt IRM 10 1 0.1 0.01 0.001 Gate trigger current, IGT - (A) 100 10 1 0.1 Region of certain triggering Upper limit 95% Lower limit 5% VGD IFGM Table gives pulse power PGM in Watts Pulse width µs 20 25 100 500 1ms 10ms Frequency Hz 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 12.5 - 0.1 0.01 0.001 0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction Effective thermal resistance Junction to case ˚C/W Double side 0.041 0.044 0.051 0.061 Anode side 0.074 0.077 0.084 0.093 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ |
Similar Part No. - DCR720E16 |
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Similar Description - DCR720E16 |
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