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DCR1673SZ26 Datasheet(PDF) 4 Page - Dynex Semiconductor |
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DCR1673SZ26 Datasheet(HTML) 4 Page - Dynex Semiconductor |
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4 / 8 page  4/8 www.dynexsemi.com DCR1673SZ GATE TRIGGER CHARACTERISTICS AND RATINGS V DRM = 5V, T case = 25 oC Conditions Parameter Symbol V GT Gate trigger voltage V DRM = 5V, Tcase = 25 oC I GT Gate trigger current V GD Gate non-trigger voltage At V DRM Tcase = 125 oC V FGM Peak forward gate voltage Anode positive with respect to cathode V FGN Peak forward gate voltage Anode negative with respect to cathode V RGM Peak reverse gate voltage I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power See table, gate characteristics curve P G(AV) Mean gate power 3.5 V 500 mA 0.25 V 30 V 0.25 V 5V 30 A 150 W 10 W Max. Units DYNAMIC CHARACTERISTICS Parameter Symbol Conditions Typ. Max. Units I RRM/IDRM Peak reverse and off-state current At V RRM/VDRM, Tcase = 125 oC From 67% V DRM to 1100A Gate source 1A t r = 0.5µs, Tj = 125 oC dV/dt Maximum linear rate of rise of off-state voltage To 67% V DRM Tj = 125 oC - 500 mA - 1000 V/ µs Repetitive 50Hz - 250 A/ µs Non-repetitive - 500 A/ µs Rate of rise of on-state current dI/dt V T(TO) Threshold voltage At T vj = 125 oC r T On-state slope resistance At T vj = 125 oC t gd Delay time 0.82 -V - 0.076 m Ω 1.0 1.5 µs V D = 67% VDRM, Gate source 20V, 10Ω t r = 0.5µs, Tj = 25 oC I L Latching current T j = 25 oC, V D = 5V I H Holding current T j = 25 oC, R g-k = ∞ 150 750 mA 40 200 mA |
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Similar Description - DCR1673SZ26 |
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