Electronic Components Datasheet Search |
|
DCR1575SY40 Datasheet(PDF) 6 Page - Dynex Semiconductor |
|
DCR1575SY40 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 8 page 6/8 www.dynexsemi.com DCR1575SY Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% V RRM at T case = 125˚C) Fig.4 Stored charge Fig.5 Gate characteristics 10000 1000 100 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) 100 100000 Conditions: Tj = 125˚C, VR = 800V, IT = 2000A Snubber 1µF, 11 Ohms Max. QS Min. QS I RM Q S t p = 2ms I T dI/dt 100 10 1 0.1 0.001 0.1 0.01 1.0 10 Lower Limit 1% Upper Limit 99% Tj = 25˚C Gate trigger current, IGT - (A) 5W 50W 20W 10W 2W Tj = -40˚C Tj = 125˚C Table gives pulse power PGM in Watts Pulse Width µs 100 200 500 1ms 10ms 50 150 150 150 150 20 100 150 150 150 100 - 400 150 125 100 25 - Frequency Hz 10 1 0.1 0.01 0.001 Time - (s) 0.1 0.01 0.001 0.0001 Double side cooled Anode side cooled 100 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ Effective thermal resistance Junction to case ˚C/W Double side 0.0095 0.0105 0.0112 0.0139 Anode side 0.019 0.020 0.0207 0.0234 110 5 10 1 50 Cycles at 50Hz ms Duration 0 20 40 60 80 100 I2t 0 1.0 2.0 3.0 4.0 5.0 Tcase = 125˚C With 50% VRRM 6.0 7.0 |
Similar Part No. - DCR1575SY40 |
|
Similar Description - DCR1575SY40 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |