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DCR1260Y61 Datasheet(PDF) 3 Page - Dynex Semiconductor

Part # DCR1260Y61
Description  Phase Control Thyristor Target Information
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DCR1260Y61 Datasheet(HTML) 3 Page - Dynex Semiconductor

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DCR1260Y
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Parameter
Surge (non-repetitive) on-state current
I2t for fusing
Surge (non-repetitive) on-state current
I2t for fusing
Test Conditions
10ms half sine, T
case = 125˚C
V
R = 50% VRRM - 1/4 sine
10ms half sine, T
case = 125˚C
V
R = 0
Symbol
I
TSM
I2t
I
TSM
I2t
SURGE RATINGS
Units
kA
A2s
kA
A2s
Max.
16.7
1.4 x 106
20.8
2.18 x 106
Parameter
Peak reverse and off-state current
Max. linear rate of rise of off-state voltage
Rate of rise of on-state current
Threshold voltage
On-state slope resistance
Delay time
Turn-off time
Latching current
Holding current
Test Conditions
At V
RRM/VDRM, Tcase = 125˚C
To 67% V
DRM, Tj = 125˚C
From 67% V
DRM,
Repetitive 50Hz
Gate source 30V, 15
Ω, Non-repetitive
t
r ≤ 0.5µs, Tj = 125˚C
At T
vj = 125˚C
At T
vj = 125˚C
V
D = 67% VDRM, gate source 30V, 15Ω
t
r = 0.5µs, Tj = 25˚C
I
T = 1000A, tp = 1ms, Tj =125˚C,
V
R = 100V, dIRR/dt = 10A/µs,
V
DR = 67% VDRM,
dV
DR/dt = 25V/µs linear
T
j = 25˚C, VD = 10V
T
j = 25˚C
Symbol
I
RRM/IRRM
dV/dt
dI/dt
V
T(TO)
r
T
t
gd
t
q
I
L
I
H
DYNAMIC CHARACTERISTICS
Units
mA
V/
µs
A/
µs
A/
µs
V
m
Ω
µs
µs
mA
mA
Max.
300
1000
150
300
1.2
1.18
1.5
-
600
200
Min.
-
-
-
-
-
-
0.5
600
-
-


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