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DCR1008SF35 Datasheet(PDF) 6 Page - Dynex Semiconductor |
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DCR1008SF35 Datasheet(HTML) 6 Page - Dynex Semiconductor |
6 / 8 page 6/8 www.dynexsemi.com DCR1008SF Fig.6 Transient thermal impedance - junction to case Fig.7 Surge (non-repetitive) on-state current vs time (with 50% V RRM at T case = 125˚C) 0.1 0.01 0.001 0.001 0.01 0.1 1.0 10 Time - (s) Anode side cooled Double side cooled Conduction Effective thermal resistance Junction to case ˚C/W Double side 0.022 0.024 0.026 0.027 Anode side 0.038 0.040 0.042 0.043 d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 40 30 20 10 0 110 1 2 3 45 50 ms Cycles at 50Hz Duration 450 500 550 600 I2t I2t = Î2 x t 2 650 700 10 20 30 Fig.4 Stored charge Fig.5 Gate characteristics 10000 1000 100 0.1 1.0 10 Rate of decay of on-state current, dI/dt - (A/µs) 100 100000 1000 100 10 10000 Min. IRR Max. QS Min. QS Max. IRR Conditions: Tj = 125˚C, IT = 3000A IRM QS tp = 1.6ms IT dI/dt 10 1 0.1 0.01 0.001 Gate trigger current, IGT - (A) 100 10 1 0.1 Region of certain triggering Upp er limit 95% Lower limit 5% VGD 100 200 500 1ms 10ms Frequency Hz 50 150 150 150 150 20 100 150 150 150 50 - 400 150 125 100 25 - Pulse width µs Table gives pulse power PGM in Watts |
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