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DCR1002SF10 Datasheet(PDF) 6 Page - Dynex Semiconductor

Part # DCR1002SF10
Description  Phase Control Thyristor
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DCR1002SF10 Datasheet(HTML) 6 Page - Dynex Semiconductor

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DCR1002SF
Fig.6 Gate characteristics
10
1
0.1
0.01
0.001
Gate trigger current, IGT - (A)
100
10
1
0.1
Region of certain
triggering
Upp
er
limit
95%
Lower
limit
5%
VGD
100
200
500
1ms
10ms
Frequency Hz
50
150
150
150
150
20
100
150
150
150
50
-
400
150
125
100
25
-
Pulse width
µs
Table gives pulse power PGM in Watts
0.1
0.01
0.001
0.001
0.01
0.1
1.0
10
Time - (s)
Anode side cooled
Double side cooled
Conduction
Effective thermal resistance
Junction to case ˚C/W
Double side
0.018
0.021
0.022
0.025
Anode side
0.036
0.038
0.040
0.043
d.c.
Halfwave
3 phase 120˚
6 phase 60˚
Fig.6 Transient thermal impedance - junction to case
Fig.4 Stored charge
Fig.5 Reverse recovery current
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
10000
1000
100
Conditions: IT = 1000A, VR = –100V,
T
j = 125˚C
Q
S is total integral stored charge
IRR
QS
IT
dI/dt
Max QS
Min QS
0.1
1.0
10
100
Rate of decay of on-state current, dI/dt - (A/µs)
10000
1000
100
Conditions: IT = 1000A, VR = –100V,
T
j = 125˚C
Max I
RR
Min I
RR


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