Alternative Device Available

SFH1690AT, SFH1690BT, SFH1690CT, SFH1690ABT

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Vishay Semiconductors

Rev. 2.1, 23-May-13

2

Document Number: 83537

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Note

• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not

implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute

maximum ratings for extended periods of the time can adversely affect reliability.

Fig. 1 - Permissible Power Dissipation vs. Temperature

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

INPUT

DC forward current

50

mA

Reverse voltage

6V

Surge forward current

2.5

A

Power dissipation

80

mW

Derate linearly from 25 °C

0.7

mW/°C

OUTPUT

Collector emitter voltage

70

V

Emitter collector voltage

7V

Collector current

50

mA

100

mW

Power dissipation

150

mW

Derate linearly from 25 °C

1.5

mW/°C

COUPLER

Isolation test voltage between emitter

and detector

t = 1 s

3750

Operating temperature range

- 55 to + 110

°C

Storage temperature range

- 55 to + 150

°C

Soldering temperature

max. 10 s dip soldering distance to

seating plane

 1.5 mm

260

°C

0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

17567

Phototransistor

Diode