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2SC5177 Datasheet(PDF) 1 Page - NEC

Part No. 2SC5177
Description  NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
Logo NEC - NEC

2SC5177 Datasheet(HTML) 1 Page - NEC

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SILICON TRANSISTOR
FEATURES
Low Current Consumption and High Gain
|S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Mini-Mold package
EIAJ: SC-59
ORDERING INFORMATION
PART
QUANTITY
ARRANGEMENT
NUMBER
2SC5177-T1
3 000 units/reel
2SC5177-T2
3 000 units/reel
Remark Contact your NEC sales representatives to order samples
for evaluation (available in batches of 50).
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
2SC5177
Document No. P12101EJ2V0DS00 (2nd edition)
(Previous No. TC-2474)
Date Published
November 1996 N
Printed in Japan
©
1994
DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE
FOR LOW-NOISE MICROWAVE AMPLIFICATION
PACKAGE DIMENSIONS
(Units: mm)
CAUTION; This transistor uses high-frequency technology. Be careful not to allow excessive current to flow through the transistor, including static electricity.
Embossed tape, 8 mm wide, pin
No. 3 (collector) facing the
perforations
Embossed tape, 8 mm wide, pins
No. 1 (emitter) and No. 2 (base)
facing the perforations
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
2
1
2.8±0.2
1.5
0.65
+0.1
–0.15
3


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